CVD Equipment grows low-defect 4H silicon carbide single-crystal boule on PVT system

• CVD Equipment demonstrated growth of single-crystal silicon carbide boules using its Physical Vapor Transport systems in collaboration with Stony Brook University.
• Stony Brook University characterization found 4H crystal structure with no polytypes, citing low defect density.
• Results support Stony Brook’s onsemi Research Center for Wide Bandgap Materials, positioning CVD Equipment for wider adoption in next-generation semiconductor manufacturing.

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